Semiconductor device, related manufacturing method, and related electronic device

ABSTRACT

A semiconductor device may include the following elements: a first substrate; a second substrate; a dielectric layer, which may be positioned between the first substrate and the second substrate and may have a hole; a first conductive member, which may be positioned in the dielectric layer; a second conductive member, which may be positioned in the dielectric layer, may be spaced from the first conductive member, and may be positioned closer to the second substrate than the first conductive member; and a third conductive member, which may contact both the first conductive member and the second conductive member through the hole.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims priority to and benefit of Chinese PatentApplication No. 201410143547.7, filed on 10 Apr. 2014, the ChinesePatent Application being incorporated herein by reference in itsentirety.

BACKGROUND OF THE INVENTION

The present invention is related to a semiconductor device, a method formanufacturing the semiconductor device, and an electronic device thatincludes the semiconductor device.

An electronic device may include various components and/or modules. Forexample, a mobile phone may include one or more of an image signalprocessor (ISP), a back-illuminated sensor (BSI), a radio frequencyfront end module system on chip (RF FEM SOC), a nonvolatile memory(NVM), etc. Some the components and modules may include semiconductordevices having three-dimensional integrated circuits (3D ICs) thatinclude interconnected semiconductor device elements that are includedin different layers of circuits.

Via members for connecting elements of different layers may besubstantially long and may respectively extend through separated vias.Therefore, the semiconductor device may have significant parasiticissues, such as additional RC delay and/or parasitic capacitance, whichmay undesirably affect the performance of the semiconductor device.

SUMMARY

An embodiment of the present invention may be related to a semiconductordevice. The semiconductor device may include the following elements: afirst substrate (e.g., a first semiconductor substrate); a secondsubstrate (e.g., a second semiconductor substrate); a dielectric layer,which may be positioned between the first substrate and the secondsubstrate and may have a hole; a first conductive member, which may bepositioned in the dielectric layer; a second conductive member, whichmay be positioned in the dielectric layer, may be spaced from the firstconductive member, and may be positioned closer to the second substratethan the first conductive member; and a third conductive member, whichmay directly contact both the first conductive member and the secondconductive member through the hole.

Each of the first conductive member and the second conductive member mayextend parallel to the second substrate. At least one of the firstconductive member and the second conductive member may include analuminum (Al) portion.

The third conductive member may extend perpendicular to the secondsubstrate. The third conductive member may include at least one of acopper (Cu) portion and a tungsten (W) portion.

The third conductive member may extend through an insulating portion ofthe first substrate.

A first side (e.g., a first bottom side) of the third conductive membermay directly contact the first conductive member. A second side (e.g., asecond bottom side) of the third conductive member may directly contactthe second conductive member. A third side (e.g., a lateral side) of thethird conductive member may be positioned inside the dielectric layerand may be directed connected to each of the first side of the thirdconductive member and the second side of the third conductive member.

A length of the third side of the third conductive member may be lessthan a total length of the third conductive member in a directionperpendicular to the second substrate (e.g., the bottom surface of thesecond substrate opposite the first substrate).

The first side of the third conductive member may directly contact afirst side of the first conductive member. The third side of the thirdconductive member may directly contact a second side of the firstconductive member.

The third conductive member may include a conductive material portionand a diffusion barrier. The conductive material portion may be formedof a first conductive material (e.g., at least one of copper, tungsten,and/or one or more other suitable materials). The diffusion barrier maybe formed of a second conductive material (e.g., tantalum nitride and/orone or more other suitable materials) different from the firstconductive material. The diffusion barrier may be positioned between theconductive material portion and at least one of the first conductivemember and the second conductive member.

The first conductive member may include a conductive material portionand an etch-stop layer. The conductive material portion may be formed ofa first conductive material (e.g., aluminum and/or one or more othersuitable materials). The etch-stop layer may be formed of a secondconductive material (e.g., tantalum nitride and/or one or more othersuitable materials) different from the first conductive material. Theetch-stop layer may be positioned between the conductive materialportion and the first substrate.

The third conductive member may directly contact both the conductivematerial portion and the etch-stop layer.

The etch-stop layer may be positioned between the conductive materialportion and a portion of the third conductive member.

The second conductive member may include a conductive material portionand an etch-stop layer. The conductive material portion may be formed ofa first conductive material (e.g., aluminum and/or one or more othersuitable materials). The etch-stop layer may be formed of a secondconductive material (e.g., tantalum nitride and/or one or more othersuitable materials) different from the first conductive material. Theetch-stop layer may be positioned between the conductive materialportion and the third conductive member.

The third conductive member may include a metal portion and a diffusionbarrier. The diffusion barrier may be positioned between the metalportion and the etch-stop layer.

An embodiment of the invention may be related to a method formanufacturing a semiconductor device. The method may include thefollowing steps: preparing a first substrate, which may include aninsulating layer; preparing a second substrate; providing a firstdielectric layer on the first substrate, wherein a first conductivemember may be positioned in the first dielectric layer; providing asecond dielectric layer on the second substrate, wherein a secondconductive member may be positioned in the second dielectric layer;bonding the first dielectric layer and the second dielectric layer toeach other to form a combined dielectric layer; forming a hole in thecombined dielectric layer, such that the hole exposes a portion of thefirst conductive member and exposes a portion of the second conductivemember; and providing at least a conductive material in the hole to forma third conductive member, such that the third conductive member maydirectly contact both the portion of the first conductive member and theportion of the second conductive member through the hole.

A first side of the third conductive member may directly contact thefirst conductive member. A second side of the third conductive membermay directly contact the second conductive member. A third side of thethird conductive member may be positioned inside the combined dielectriclayer and may be directed connected to each of the first side of thethird conductive member and the second side of the third conductivemember.

A length of the third side of the third conductive member may be lessthan a total length of the third conductive member in a directionperpendicular to the second substrate.

The first side of the third conductive member may directly contact afirst side of the first conductive member. The third side of the thirdconductive member may directly contact a second side of the firstconductive member.

The method may include providing a diffusion barrier material (e.g.,tantalum nitride and/or one or more other suitable materials) in thehole to form a diffusion barrier. The conductive material (e.g., atleast one of copper, tungsten, and/or one or more other suitablematerials) may be subsequently provided to form a conductive materialportion. The third conductive member may include the conductive materialportion and the diffusion barrier.

The method may include forming the first conductive member such that thefirst conductive member may include the first conductive member aconductive material portion and an etch-stop layer. The conductivematerial portion may be formed of a first conductive material (e.g.,aluminum and/or one or more other suitable materials). The etch-stoplayer may be formed of a second conductive material (e.g., tantalumnitride and/or one or more other suitable materials) different from thefirst conductive material. The etch-stop layer may be positioned betweenthe conductive material portion and the first substrate after thebonding.

The third conductive member may be formed to contact both the conductivematerial portion and the etch-stop layer.

The third conductive member may be formed such that the etch-stop layermay be positioned between the conductive material portion and a portionof the third conductive member.

The method may include forming the second conductive member such thatthe second conductive member may include a conductive material portionand an etch-stop layer. The conductive material portion may be formed ofa first conductive material (e.g., aluminum and/or one or more othersuitable materials). The etch-stop layer may be formed of a secondconductive material (e.g., tantalum nitride and/or one or more othersuitable materials) different from the first conductive material. Thethird conductive member may be formed such that the third conductivemember may include a diffusion barrier and such that the etch-stop layermay be positioned between the conductive material portion and thediffusion barrier.

An embodiment of the invention may be related to an electronic devicemay include one or more features of the aforementioned semiconductordevice and/or may include a semiconductor device manufactured using oneor more steps of the aforementioned method.

According to embodiments of the invention, in a semiconductor device,two separated horizontal conductive members may be electricallyconnected to other elements through a single vertical conductive member,rather than through two spaced vertical conductive members. Therefore,parasitic issues in the semiconductor device may be minimized orsubstantially prevented. Advantageously, the performance of thesemiconductor device (and a related electronic device) may besubstantially satisfactory.

The above summary is related to one or more of many embodiments of theinvention disclosed herein and is not intended to limit the scope of theinvention.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows a schematic cross-sectional view that illustrates elementsand structures of a semiconductor device in accordance with one or moreembodiments of the present invention.

FIG. 2 shows a schematic cross-sectional view that illustrates elementsand structures of a semiconductor device in accordance with one or moreembodiments of the present invention.

FIG. 3 shows a schematic cross-sectional view that illustrates elementsand structures of a semiconductor device in accordance with one or moreembodiments of the present invention.

FIG. 4A, FIG. 4B, FIG. 4C, and FIG. 4D show schematic cross-sectionalviews that illustrate structures formed in a method for manufacturing asemiconductor device in accordance with one or more embodiments of thepresent invention.

FIG. 5 shows a flowchart that illustrates a method for manufacturing asemiconductor device in accordance with one or more embodiments of thepresent invention.

DETAILED DESCRIPTION

Example embodiments of the present invention are described withreference to the accompanying drawings. As those skilled in the artwould realize, the described embodiments may be modified in variousdifferent ways, all without departing from the spirit or scope of thepresent invention. Embodiments of the present invention may be practicedwithout some or all of these specific details. Well known process stepsand/or structures may not have been described in detail in order to notunnecessarily obscure the present invention.

The drawings and description are illustrative and not restrictive. Likereference numerals may designate like (e.g., analogous or identical)elements in the specification. Repetition of description may be avoided.

The relative sizes and thicknesses of elements shown in the drawings arefor facilitate description and understanding, without limiting thepresent invention. In the drawings, the thicknesses of some layers,films, panels, regions, etc., may be exaggerated for clarity.

Illustrations of example embodiments in the figures may representidealized illustrations. Variations from the shapes illustrated in theillustrations, as a result of, for example, manufacturing techniquesand/or tolerances, may be possible. Thus, the example embodiments shouldnot be construed as limited to the shapes or regions illustrated hereinbut are to include deviations in the shapes. For example, an etchedregion illustrated as a rectangle may have rounded or curved features.The shapes and regions illustrated in the figures are illustrative andshould not limit the scope of the example embodiments.

Although the terms “first”, “second”, etc. may be used herein todescribe various elements, these elements, should not be limited bythese terms. These terms may be used to distinguish one element fromanother element. Thus, a first element discussed below may be termed asecond element without departing from the teachings of the presentinvention. The description of an element as a “first” element may notrequire or imply the presence of a second element or other elements. Theterms “first”, “second”, etc. may also be used herein to differentiatedifferent categories or sets of elements. For conciseness, the terms“first”, “second”, etc. may represent “first-category (or first-set)”,“second-category (or second-set)”, etc., respectively.

If a first element (such as a layer, film, region, or substrate) isreferred to as being “on”, “neighboring”, “connected to”, or “coupledwith” a second element, then the first element can be directly on,directly neighboring, directly connected to, or directly coupled withthe second element, or an intervening element may also be presentbetween the first element and the second element. If a first element isreferred to as being “directly on”, “directly neighboring”, “directlyconnected to”, or “directed coupled with” a second element, then nointended intervening element (except environmental elements such as air)may also be present between the first element and the second element.

Spatially relative terms, such as “beneath”, “below”, “lower”, “above”,“upper”, and the like, may be used herein for ease of description todescribe one element or feature's spatial relationship to anotherelement(s) or feature(s) as illustrated in the figures. It will beunderstood that the spatially relative terms may encompass differentorientations of the device in use or operation in addition to theorientation depicted in the figures. For example, if the device in thefigures is turned over, elements described as “below” or “beneath” otherelements or features would then be oriented “above” the other elementsor features. Thus, the term “below” can encompass both an orientation ofabove and below. The device may be otherwise oriented (rotated 90degrees or at other orientations), and the spatially relativedescriptors used herein should be interpreted accordingly.

The terminology used herein is for the purpose of describing particularembodiments and is not intended to limit the invention. As used herein,the singular forms, “a”, “an”, and “the” may indicate plural forms aswell, unless the context clearly indicates otherwise. The terms“includes” and/or “including”, when used in this specification, mayspecify the presence of stated features, integers, steps, operations,elements, and/or components, but may not preclude the presence oraddition of one or more other features, integers, steps, operations,elements, components, and/or groups.

Unless otherwise defined, terms (including technical and scientificterms) used herein have the same meanings as commonly understood by oneof ordinary skill in the art related to this invention. Terms, such asthose defined in commonly used dictionaries, should be interpreted ashaving meanings that are consistent with their meanings in the contextof the relevant art and should not be interpreted in an idealized oroverly formal sense unless expressly so defined herein.

The term “connect” may mean “electrically connect”. The term “insulate”may mean “electrically insulate”. The term “conductive” may mean“electrically conductive”

Unless explicitly described to the contrary, the word “comprise” andvariations such as “comprises”, “comprising”, “include”, or “including”may imply the inclusion of stated elements but not the exclusion ofother elements.

Various embodiments, including methods and techniques, are described inthis disclosure. Embodiments of the invention may also cover an articleof manufacture that includes a non-transitory computer readable mediumon which computer-readable instructions for carrying out embodiments ofthe inventive technique are stored. The computer readable medium mayinclude, for example, semiconductor, magnetic, opto-magnetic, optical,or other forms of computer readable medium for storing computer readablecode. Further, the invention may also cover apparatuses for practicingembodiments of the invention. Such apparatus may include circuits,dedicated and/or programmable, to carry out operations pertaining toembodiments of the invention. Examples of such apparatus include ageneral purpose computer and/or a dedicated computing device whenappropriately programmed and may include a combination of acomputer/computing device and dedicated/programmable hardware circuits(such as electrical, mechanical, and/or optical circuits) adapted forthe various operations pertaining to embodiments of the invention.

FIG. 1 shows a schematic cross-sectional view that illustrates elementsand structures of a semiconductor device in accordance with one or moreembodiments of the present invention. The semiconductor device mayinclude a first chip 100 (or first circuit layer 100) and a second chip200 (or second circuit layer 200) that overlap each other. Elements ofthe first chip 100 may be connected to elements of the second chip 200through a first via member 1011, a second via member 1012, and ahorizontal interconnect 1013 that is electrically connected to each ofthe first via member 1011 and the second via member 1012.

FIG. 2 shows a schematic cross-sectional view that illustrates elementsand structures of a semiconductor device in accordance with one or moreembodiments of the present invention. As illustrated in FIG. 2, thesemiconductor device may include the following elements: a firstsubstrate 100 (e.g., a first semiconductor substrate associated with afirst chip); a second substrate 200 (e.g., a second semiconductorsubstrate associated with a second chip); a dielectric layer (e.g., acombination of a first dielectric layer 101 and a second dielectriclayer 103), which may be positioned between the first substrate 100 andthe second substrate 200 and may have a hole; a first conductive member107, which may be positioned in the dielectric layer; a secondconductive member 109, which may be positioned in the dielectric layer,may be spaced from the first conductive member 107, and may bepositioned closer to the second substrate 200 than the first conductivemember 107; and a third conductive member 104, which may directlycontact both the first conductive member 107 and the second conductivemember 109 through the hole.

The first substrate 100 may include a first monocrystalline siliconportion. The first substrate 100 may include a first insulating member106 (which may abut the first monocrystalline silicon portion) and afirst P-N junction set 105 (which may be positioned between two portionsof the first insulating member 106). The semiconductor device mayinclude a third dielectric layer 102, wherein the first substrate 100may be positioned between the first dielectric layer 101 and the thirddielectric layer 102. The first P-N junction set 105 may form at leastpart of a first field-effect transistor set 201. Lateral sides of thefirst field-effect transistor set 201 may be insulated by the firstinsulating member 106.

The second substrate 200 may include a second monocrystalline siliconportion. The second substrate 200 may include a second insulating member110 (which may abut the second monocrystalline silicon portion) and asecond P-N junction set 108 (which may be positioned between twoportions of the second insulating member 110). The second P-N junctionset 108 may form at least part of a second field-effect transistor set202. Lateral sides of the second field-effect transistor set 202 may beinsulated by the second insulating member 110.

At least one of the first dielectric layer 101, the second dielectriclayer 103, and the third dielectric layer 102 may be formed of asilicon-containing dielectric material. The first dielectric layer 101may have a multi-layer structure, wherein the first conductive member107 may be positioned between adjacent layers of the first dielectriclayer 101. The second dielectric layer 103 may have a multi-layerstructure, wherein the second conductive member 109 may be positionedbetween adjacent layers of the second dielectric layer 103.

Each of the first conductive member 107 and the second conductive member109 may extend parallel to the second substrate 200. At least one of thefirst conductive member 107 and the second conductive member 109 mayinclude an aluminum (Al) portion.

The third conductive member 104 may extend perpendicular to the secondsubstrate 200. The third conductive member 104 may include at least oneof a copper (Cu) portion and a tungsten (W) portion.

The third conductive member 104 may extend through the first insulatingmember 106. A first portion of the third conductive member 104 (e.g., aleft portion of the member 104 shown in FIG. 2) may be positioned insidethe first dielectric layer 101 and may directly contact the firstconductive member 107. A second portion of the third conductive member104 (e.g., a right portion of the member 104 shown in FIG. 2) may extendthrough the first dielectric layer 101 into the second dielectric layer103 and may directly contact the second conductive member 109. Both thefirst and second portions of the third conductive member 104 may bepositioned in a hole of the combined dielectric layer that includes thedielectric layers 101 and 103. The third conductive member 104 maycontact both the first conductive member 107 and the second conductivemember 109 through the same hole.

The third conductive member 104 may extend through the third dielectriclayer 102 and may directly contact one or more conductive members thatare positioned on the third dielectric layer 102.

In an embodiment, the third conductive member 104 may extend into anintegrated dielectric layer that includes the third dielectric layer 102and may directly contact one or more conductive members (e.g., theinterconnect structure 203) positioned inside the integrated dielectriclayer.

A first side of the third conductive member 104 (e.g., a relativelyhigher bottom side of the member 104 illustrated in FIG. 2) may directlycontact the first conductive member 107. A second side of the thirdconductive member 104 (e.g., a relatively lower bottom side of themember 104 illustrated in FIG. 2) may directly contact the secondconductive member 109. A third side (e.g., a lateral side) of the thirdconductive member 104 may be positioned inside the dielectric layer andmay be directed connected to each of the first side of the thirdconductive member 104 and the second side of the third conductive member104.

A length of the third side of the third conductive member 104 may beless than a total length of the third conductive member 104 in adirection perpendicular to the second substrate 200 (e.g., the bottomsurface of the second substrate 200 opposite the first substrate 100).

The first side of the third conductive member 104 may directly contact afirst side of the first conductive member 107. The third side of thethird conductive member 104 may directly contact a second side of thefirst conductive member 107.

The third conductive member 104 may include a conductive materialportion and a diffusion barrier 1041. The conductive material portionmay be formed of a first conductive material (e.g., at least one ofcopper, tungsten, and/or one or more other suitable materials). Thediffusion barrier 1041 may be formed of a second conductive material(e.g., tantalum nitride and/or one or more other suitable materials)different from the first conductive material. The diffusion barrier 1041may be positioned between the conductive material portion and at leastone of the first conductive member 107 and the second conductive member109. The diffusion barrier 1041 may minimize or substantially preventunwanted diffusion of metal material.

The first conductive member 107 may include a conductive materialportion and an etch-stop layer 1071. The conductive material portion maybe formed of a first conductive material (e.g., aluminum and/or one ormore other suitable materials). The etch-stop layer 1071 may be formedof a second conductive material (e.g., tantalum nitride and/or one ormore other suitable materials) different from the first conductivematerial. The etch-stop layer 1071 may be positioned between theconductive material portion and the first substrate 100.

The third conductive member 104 may directly contact both the conductivematerial portion and the etch-stop layer 1071.

The etch-stop layer 1071 may be positioned between the conductivematerial portion and a portion of the third conductive member 104.

The second conductive member 109 may include a conductive materialportion and an etch-stop layer 1091. The conductive material portion maybe formed of a first conductive material (e.g., aluminum and/or one ormore other suitable materials). The etch-stop layer 1091 may be formedof a second conductive material (e.g., tantalum nitride and/or one ormore other suitable materials) different from the first conductivematerial. The etch-stop layer 1091 may be positioned between theconductive material portion and the third conductive member 104.

The third conductive member 104 may include a metal portion and adiffusion barrier 1041. The diffusion barrier 1041 may be positionedbetween the metal portion and the etch-stop layer 1091.

The semiconductor device may include one or more other elements, such asone or more of a transistor, a micro-electro-mechanical system (MEMS),an integrated passive device (IPD), etc., and related interconnectstructure.

According to embodiments of the invention, in the semiconductor device,two separated horizontal conductive members 107 and 109 may beelectrically connected to other elements through a single verticalconductive member 104, rather than through two spaced verticalconductive members. Therefore, parasitic issues (such as undesirable RCdelay and/or parasitic capacitance) in the semiconductor device may beminimized or substantially prevented. Advantageously, the performance ofthe semiconductor device (and a related electronic device) may besubstantially satisfactory.

FIG. 3 shows a schematic cross-sectional view that illustrates elementsand structures of a semiconductor device in accordance with one or moreembodiments of the present invention.

Some features and advantages of the semiconductor device illustrated inFIG. 3 may be identical to or analogous to some features and advantagesof the semiconductor device discussed with reference to FIG. 2. Forexample, as illustrated in FIG. 3, an alternative third conductivemember 104′ may contact both the first conductive member 107 and thesecond conductive member 109 through the same hole of the combineddielectric layer that includes the first dielectric layer 101 and thesecond dielectric layer 102.

Some features and advantages of the semiconductor device illustrated inFIG. 3 may be different from some features and advantages of thesemiconductor device discussed with reference to FIG. 2. For example, asillustrated in FIG. 3, the alternative third conductive member 104′ maynot extend into the first substrate 100 (or the first insulating member106), and the first substrate 100 (and/or the first insulating member106) may be positioned between the third conductive member 204 and thethird dielectric layer 102. A top side of the alternative thirdconductive member 104′ may be positioned inside the first dielectriclayer 101 and may be spaced from the first substrate 100. An insulatingelement and/or a conductive element may directly contact the top side ofthe third conductive member 104 and may extend into and/or extendthrough the first substrate 100.

The relative shortness of the alternative third conductive member 104′may advantageously reduce unwanted antenna effects.

In an embodiment, an alternative or additional third conductive membermay extend into the first substrate 100 without extending through thefirst substrate 100. A top side of the alternative or additional thirdconductive member may be positioned inside the first substrate 100 andmay be spaced from the third dielectric layer 102.

FIG. 4A, FIG. 4B, FIG. 4C, and FIG. 4D show schematic cross-sectionalviews that illustrate structures formed in a method for manufacturingthe semiconductor device in accordance with one or more embodiments ofthe present invention. FIG. 5 shows a flowchart that illustrates amethod for manufacturing a semiconductor device, for example, asemiconductor device related to one or more of FIGS. 2, 3, 4A, 4B, 4C,and 4D, in accordance with one or more embodiments of the presentinvention.

Referring to FIG. 5, the method may include a step S101, a step S102, astep S103, a step S104, and a step S105.

Referring to FIG. 5 and FIG. 4A, the step S101 may include the followingsub-steps: preparing a first substrate 100; preparing a second substrate200; providing a first dielectric layer 101 that overlaps the firstsubstrate 100, wherein a first conductive member 107 may be positionedin the first dielectric layer 101; and providing a second dielectriclayer 103 that overlaps the second substrate 200, wherein a secondconductive member 109 may be positioned in the second dielectric layer103. The step S101 may further include providing a third dielectriclayer 102 that overlaps the first substrate 100.

One or more of the first substrate 100, the second substrate 200, thefirst dielectric layer 101, the second dielectric layer 103, the thirddielectric layer 102, the first conductive member 107, and the secondconductive member 109 may have one or more features discussed above withreference to FIG. 2.

The method may include forming the first conductive member 107 such thatthe first conductive member 107 may include the first conductive member107 a conductive material portion and an etch-stop layer 1071. Theconductive material portion may be formed of a first conductive material(e.g., aluminum and/or one or more other suitable materials). Theetch-stop layer 1071 may be formed of a second conductive material(e.g., tantalum nitride and/or one or more other suitable materials)different from the first conductive material. The etch-stop layer 1071may be positioned between the conductive material portion and the firstsubstrate 100 after the bonding.

The method may include forming the second conductive member 109 suchthat the second conductive member 109 may include a conductive materialportion and an etch-stop layer 1091. The conductive material portion maybe formed of a first conductive material (e.g., aluminum and/or one ormore other suitable materials). The etch-stop layer 1091 may be formedof a second conductive material (e.g., tantalum nitride and/or one ormore other suitable materials) different from the first conductivematerial.

Referring to FIG. 5 and FIG. 4A, the step S102 may include bonding thefirst dielectric layer 101 and the second dielectric layer 103 to eachother, e.g., through one or more wafer-bonding processes, to form acombined dielectric layer.

Referring to FIG. 5 and FIG. 4A, the step S103 may include forming(e.g., through etching) a hole 1040 in the combined dielectric layer,such that the hole 1040 may expose a portion of the first conductivemember 107 and may expose a portion of the second conductive member 109.

Referring to FIG. 5 and FIG. 4B, the step S104 may include providing adiffusion barrier material (e.g., tantalum nitride and/or one or moreother suitable materials) in the hole 1040 to form a diffusion barrier1041. The diffusion barrier 1041 may cover an inner side surface of thehole 1040 and may cover the exposed portions of the conductive members107 and 109. The diffusion barrier material may also overlap (and cover)the third dielectric layer 102 and/or the first substrate 100.

Referring to FIG. 5 and FIG. 4C, the step S105 may include providing aconductive material (e.g., copper, tungsten, and/or one or more othersuitable materials) in the hole to form a third conductive member 104.The third conductive member 104 may include the conductive material andthe diffusion barrier 1041 and may directly contact both the portion ofthe first conductive member 107 and the portion of the second conductivemember 109 through the hole 1040.

The formation of the third conductive member 104 may include metalplating and/or one or more other suitable processes.

The formation of the third conductive member 104 may include forming(e.g., through physical vapor deposition) a conductive seed film on thebarrier layer 1041 for facilitating subsequent electroplating. Theconductive seed film may be formed of, for example, copper and/or one ormore other suitable materials.

A first side of the third conductive member 104 may directly contact thefirst conductive member 107. A second side of the third conductivemember 104 may directly contact the second conductive member 109. Athird side of the third conductive member 104 may be positioned insidethe combined dielectric layer and may be directed connected to each ofthe first side of the third conductive member 104 and the second side ofthe third conductive member 104.

A length of the third side of the third conductive member 104 may beless than a total length of the third conductive member 104 in adirection perpendicular to the second substrate 200.

The first side of the third conductive member 104 may directly contact afirst side of the first conductive member 107. The third side of thethird conductive member 104 may directly contact a second side of thefirst conductive member 107.

The third conductive member 104 may be formed to contact both theconductive material portion and the etch-stop layer 1071.

The third conductive member 104 may be formed such that the etch-stoplayer 1071 may be positioned between the conductive material portion anda portion of the third conductive member 104.

The third conductive member 104 may be formed such that the thirdconductive member 104 may include a diffusion barrier 1041 and such thatthe etch-stop layer 1091 may be positioned between the conductivematerial portion and the diffusion barrier 1041.

Referring to FIG. 4D, the method may further include removing (e.g.,through etching) a portion of the third conductive member 104 to form analternative third conductive member 104′ with a reduced length. Thealternative third conductive member 104′ may have one or more featuresdiscussed above with reference to at least one of FIG. 2 and FIG. 3.

An embodiment of the invention may be related to an electronic device.The electronic device may include a semiconductor device that may haveone or more features and advantages analogous to or identical to one ormore features and advantages discussed above with reference to one ormore of FIG. 2, FIG. 3, FIG. 4A, FIG. 4B, FIG. 4C, and FIG. 4D.

The electronic device may be or may include one or more of a mobilephone, a tablet computer, a notebook computer, a netbook, a gameconsole, a television, a video compact disc (VCD) player, a digitalvideo disc (DVD) player, a navigation device, a camera, a camcorder, avoice recorder, an MP3 player, an MP4 player, a portable game device,etc.

The electronic device may be or may include an intermediate product(e.g., a mobile phone main board) or module including a semiconductordevice that may have one or more of the features and advantagesdiscussed above.

According to embodiments of the invention, in a semiconductor device,two separated horizontal conductive members may be electricallyconnected to other elements through a single vertical conductive member,rather than through two spaced vertical conductive members. Therefore,parasitic issues in the semiconductor device may be minimized orsubstantially prevented. Advantageously, the performance of thesemiconductor device (and a related electronic device) may besubstantially satisfactory.

While this invention has been described in terms of several embodiments,there are alterations, permutations, and equivalents, which fall withinthe scope of this invention. It should also be noted that there are manyalternative ways of implementing the methods and apparatuses of thepresent invention. Furthermore, embodiments of the present invention mayfind utility in other applications. The abstract section is providedherein for convenience and, due to word count limitation, is accordinglywritten for reading convenience and should not be employed to limit thescope of the claims. It is therefore intended that the followingappended claims be interpreted as including all such alterations,permutations, and equivalents as fall within the true spirit and scopeof the present invention.

What is claimed is:
 1. A semiconductor device comprising: a firstsubstrate; a second substrate; a dielectric layer, which is positionedbetween the first substrate and the second substrate and has a hole; afirst conductive member, which is positioned in the dielectric layer; asecond conductive member, which is positioned in the dielectric layer,is spaced from the first conductive member, and is positioned closer tothe second substrate than the first conductive member; and a thirdconductive member, which contacts both the first conductive member andthe second conductive member through the hole.
 2. The semiconductordevice of claim 1, wherein a first side of the third conductive membercontacts the first conductive member, wherein a second side of the thirdconductive member contacts the second conductive member, and wherein athird side of the third conductive member is positioned inside thedielectric layer and is directed connected to each of the first side ofthe third conductive member and the second side of the third conductivemember.
 3. The semiconductor device of claim 2, wherein a length of thethird side of the third conductive member is less than a total length ofthe third conductive member in a direction perpendicular to the secondsubstrate.
 4. The semiconductor device of claim 2, wherein the firstside of the third conductive member contacts a first side of the firstconductive member, and wherein the third side of the third conductivemember contacts a second side of the first conductive member.
 5. Thesemiconductor device of claim 1, wherein the third conductive memberincludes a conductive material portion and a diffusion barrier, whereinthe conductive material portion is formed of a first conductivematerial, wherein the diffusion barrier is formed of a second conductivematerial different from the first conductive material, and wherein thediffusion barrier is positioned between the conductive material portionand at least one of the first conductive member and the secondconductive member.
 6. The semiconductor device of claim 1, wherein thefirst conductive member includes a conductive material portion and anetch-stop layer, wherein the conductive material portion is formed of afirst conductive material, wherein the etch-stop layer is formed of asecond conductive material different from the first conductive material,and wherein the etch-stop layer is positioned between the conductivematerial portion and the first substrate.
 7. The semiconductor device ofclaim 6, wherein the third conductive member contacts both theconductive material portion and the etch-stop layer.
 8. Thesemiconductor device of claim 6, wherein the etch-stop layer ispositioned between the conductive material portion and a portion of thethird conductive member.
 9. The semiconductor device of claim 1, whereinthe second conductive member includes a conductive material portion andan etch-stop layer, wherein the conductive material portion is formed ofa first conductive material, wherein the etch-stop layer is formed of asecond conductive material different from the first conductive material,and wherein the etch-stop layer is positioned between the conductivematerial portion and the third conductive member.
 10. The semiconductordevice of claim 9, wherein the third conductive member includes a metalportion and a diffusion barrier, and wherein the diffusion barrier ispositioned between the metal portion and the etch-stop layer.
 11. Amethod for manufacturing a semiconductor device, the method comprising:preparing a first substrate; preparing a second substrate; providing afirst dielectric layer that overlaps the first substrate, wherein afirst conductive member is positioned in the first dielectric layer;providing a second dielectric layer that overlaps the second substrate,wherein a second conductive member is positioned in the seconddielectric layer; bonding the first dielectric layer and the seconddielectric layer to each other to form a combined dielectric layer;forming a hole in the combined dielectric layer, such that the holeexposes a portion of the first conductive member and exposes a portionof the second conductive member; and providing at least a conductivematerial in the hole to form a third conductive member, such that thethird conductive member contacts both the portion of the firstconductive member and the portion of the second conductive memberthrough the hole.
 12. The method of claim 11, wherein a first side ofthe third conductive member contacts the first conductive member,wherein a second side of the third conductive member contacts the secondconductive member, and wherein a third side of the third conductivemember is positioned inside the combined dielectric layer and isdirected connected to each of the first side of the third conductivemember and the second side of the third conductive member.
 13. Themethod of claim 12, wherein a length of the third side of the thirdconductive member is less than a total length of the third conductivemember in a direction perpendicular to the second substrate.
 14. Themethod of claim 12, wherein the first side of the third conductivemember contacts a first side of the first conductive member, and whereinthe third side of the third conductive member contacts a second side ofthe first conductive member.
 15. The method of claim 11, furthercomprising: providing a diffusion barrier material in the hole to form adiffusion barrier, wherein the conductive material is subsequentlyprovided to form a conductive material portion, wherein the thirdconductive member includes the conductive material portion and thediffusion barrier.
 16. The method of claim 11, further comprising:forming the first conductive member such that the first conductivemember includes the first conductive member a conductive materialportion and an etch-stop layer, wherein the conductive material portionis formed of a first conductive material, wherein the etch-stop layer isformed of a second conductive material different from the firstconductive material, and wherein the etch-stop layer is positionedbetween the conductive material portion and the first substrate afterthe bonding.
 17. The method of claim 16, wherein the third conductivemember is formed to contact both the conductive material portion and theetch-stop layer.
 18. The method of claim 16, wherein the thirdconductive member is formed such that the etch-stop layer is positionedbetween the conductive material portion and a portion of the thirdconductive member.
 19. The method of claim 11, further comprising:forming the second conductive member such that the second conductivemember includes a conductive material portion and an etch-stop layer,wherein the conductive material portion is formed of a first conductivematerial, wherein the etch-stop layer is formed of a second conductivematerial different from the first conductive material, and wherein thethird conductive member is formed such that the third conductive memberincludes a diffusion barrier and such that the etch-stop layer ispositioned between the conductive material portion and the diffusionbarrier.
 20. An electronic device comprising a semiconductor device,wherein the semiconductor device comprises: a first substrate; a secondsubstrate; a dielectric layer positioned between the first substrate andthe second substrate and has a hole; a first conductive member, which ispositioned in the dielectric layer; a second conductive member, which ispositioned in the dielectric layer, is spaced from the first conductivemember, and is positioned closer to the second substrate than the firstconductive member; and a third conductive member, which contacts boththe first conductive member and the second conductive member through thehole.